1934
Dr. Fehlner is born in Dolgeville, New York to Herman J. and Mary E. Fehlner.
1956
Dr. Fehlner graduates magna cum laude from Holy Cross College, receiving a Bachelor of Science in chemistry.
1959
Dr. Fehlner receives a Doctor of Philosophy in physical chemistry from Rensselaer Polytechnic Institute in Troy, New York.
1959
Dr. Fehlner joins the United States Air Force at the NASA Jet Propulsion Laboratory in Pasadena, California, achieving the rank of First Lieutenant.
1962
Dr. Fehlner marries Mary Garrow and takes a position in the Research Laboratory of Corning Inc. in Corning, New York.
1963
Dr. Fehlner welcomes the arrival of three sons, Paul, John, and Joseph, all born over the next three years.
1969
Dr. Fehlner spends four months at the Cavendish Laboratory at Cambridge University in England work with Professor N.F. Mott on low temperature oxidation.
1969
Dr. Fehlner is transferred to Signetics Corporation in Sunnyvale, California to work on memory field effect transistors. He serves here until 1972.
1972
Dr. Fehlner returns to the Research Laboratory in Corning, New York.
1982
Dr. Fehlner is entranced by the Seiko-Epson breadboard model of an operating, full-color, portable, flat-panel TV and spends the rest of his career on the research team working to optimize glass substrates for flat displays.
1986
Dr. Fehlner authors the book “Low-Temperature Oxidation.”
1991
Dr. Fehlner serves as an Adjunct Professor in the Department of Materials Science and Engineering at Cornell University in Ithaca, New York. He serves in this position until 2000.
1994
Dr. Fehlner receives the Stookey Award for exploratory research at Corning, Inc.
1995
Dr. Fehlner receives the Stookey Award for exploratory research at Corning, Inc.
2004
Dr. Fehlner receives the Stookey Award for exploratory research at Corning, Inc.